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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1849 DESCRIPTION With TO-3PFa package High voltage,high speed Built-in damper diode Wide area of safe operation APPLICATIONS Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 700 7 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current Ta=25ae 7 3 Collector power dissipation TC=25ae 120 150 -55~150 UNIT V V V A PC W Tj Tstg Max.operating junction temperature Storage temperature ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SD1849 SYMBOL TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 7 V VCEsat VBEsat Collector-emitter saturation voltage IC=6A; IB=1.4A IC=6A; IB=1.4A 8.0 V Base-emitter saturation voltage 1.5 V VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 10 |I A 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 5 25 hFE-2 DC current gain IC=6A ; VCE=10V 4 fT VF TOR NDU ICO E SEM ANG INCH Transition frequency IC=1A ; VCE=10V;f=0.5MHz IC=7A 2 Diode forward voltage 2.0 MHz V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1849 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm) 3 |
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